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A 48 (1989) 295. 附件 2：外文原文 Effect of gas temperature on the structural and optoelectronic properties of aSi:Hthin films deposited by PECVD abstract The effect of gas temperature (Tg) in the process of plasmaenhanced chemical vapor deposition (PECVD) on the structural and optoelectronic properties of the grown aSi:H thin film has been examined using multiple characterization techniques. Gas temperature was confirmed to be an important parameter for the optimization of fabrication process and the improvement of structural and optoelectronic performances of the thin films. The structural properties of the thin films were examined using atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and electronicspin resonance (ESR).Furthermore, the spectroscopic ellipsometry (SE), the optical transmission measurement in ultraviolet– visible region and the electrical measurement were used to investigate the optical and electrical properties of the thin films. It was found that the changes in Tg can modify the surface roughness, the amorphous work order,the hydrogen bonding modes and the density of the thin films, and eventually improve the optical and electrical Properties. 1. Introduction Hydrogenated amorphous silicon (aSi:H) thin film prepared by plasmaenhanced chemical vapor deposition (PECVD) is a technologically important material with a wide range of practical is used in the production of solar cells [1,2], infrared detectors in night vision systems [3], and thin film transistors in flat panel display devices [4]. All these applications are based on its good electrical and optical properties as well as patibility with semiconductor technology. However, the properties of aSi:H thin film fabricated by PECVD are sensitive to deposition conditions, such as substrate temperature,power density, gas flow rate and process pressure. Many effortsto prepare the highquality aSi:H thin films with lower defect density and higher structural stability have been made. It is well known that the substrate temperature can strongly affect the diffusion of the radicals on the growing surface and hence cause these radicals more readily to locate the optimum growth sites. As a result, the substrate temperature has been one of the most studied deposition parameters. As far as the temperature parameters during PECVD process are concerned, apart from the substrate temperature, the gas temperature (Tg) fed in the PECVD reaction chamber before glowdischarge is a novel process parameter for tailoring the properties of aSi:H thin films. In fact, the variation of Tg in PECVD system can influence the energy of plasma during glowdischarge and eventually modify the properties of the thin films [5]. According to Martinset al. [6], when the thin films are fabricated close to orwithin the particle formation regime in the aSi:H thin films, the dependence of thin film properties on Tg is more remarkable than on substrate , most of the studies so far have focused only on the impact of substrate temperature. In our previous study, we reported the effects of gas temperature on the structural evolution of phosphorusdoped aSi:H thin films by Raman spectroscopy [7]. The results reveal that there exists a gradual ordering of the amorphous work, both in the near surface and interior regionwith the increase of Tg, leading to a better quality of aSi:H thin films. But the further investigation in the effect of Tg on the structural and optoelectronic properties of aSi:H thin films has not been done yet, which is exactly the aim of this paper. In this study, the aSi:H thin films are deposited by PECVD at various gas temperatures. The properties of thin films are studied using multiple characterization techniques, including atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, electronicspin resonance (ESR), spectroscopic ellipsometry(SE), optical transmission measurement in ultraviolet– visible region and electrical measurement. 2. Experimental details . Sample preparation The aSi:H。